METHOD OF MAKING SELECTIVE GAS PICKUP ON BASIS OF SYSTEM OF OSCILLATING CARBON NANO-PIPES Russian patent published in 2008 - IPC B82B3/00 

Abstract RU 2314252 C1

FIELD: investigating or analyzing materials.

SUBSTANCE: method comprises applying catalyzer on the dielectric layer and growing carbon nano-pipes by catalytic pyrolysis from gas phase. Before applying catalyzer, at least one control electrode made of low-ohm conductor is formed on the dielectric substrate. The hollows that play a role of catchers are made on the dielectric. The catchers bound the planar spreading of carbon nano-pipes when they grow and improve electric and mechanical parameters of contacts formed on the nano-pipes. Opposite to the catchers, the three-layer catalytic spots are formed. The intermediate layer of the three-layered catalytic spots is a catalyzer and is used for initiating chemical reaction. The bottom and top layers initiate the catalyzer. The geometry of the spots determines the mechanical stress in the film of the catalyzer and thus the position of the centers of growth and direction of growth of the carbon nano-pipes. The carbon nano-pipes are grown on the catalyzer by catalytic pyrolysis of the carbon-containing gas. The metallic contact electrodes are made above the catalytic spots in the region of catchers.

EFFECT: simplified method.

2 cl, 1 dwg

Similar patents RU2314252C1

Title Year Author Number
FIELD EMISSION ELEMENT AND METHOD OF ITS MANUFACTURE 2017
  • Kozlov Sergej Nikolaevich
  • Zhivikhin Aleksej Vasilevich
  • Pavlov Aleksandr Aleksandrovich
  • Saurov Aleksandr Nikolaevich
RU2656150C1
METHOD OF MANUFACTURING OF A FIELD EMISSION ELEMENT 2018
  • Saurov Aleksandr Nikolaevich
  • Kozlov Sergej Nikolaevich
  • Zhivikhin Aleksej Vasilevich
  • Pavlov Aleksandr Aleksandrovich
  • Kitsyuk Evgenij Pavlovich
RU2678192C1
VERTICAL STRUCTURE OF SEMICONDUCTOR DEVICES USING NANOTUBES AND METHOD OF MAKING THEM 2005
  • Furukava Toshikharu
  • Khejki Mark Charlz
  • Kholms Stiven Dzhon
  • Khorak Dejvid Vatslav
  • Kouburger Charlz Uill'Jam Iii
RU2342315C2
VERTICAL STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMATION THEREOF 2005
  • Furukava Toshikharu
  • Khejki Mark Charlz
  • Kholms Stiven Dzhon
  • Khorak Dejvid Vatslav
  • Mitchell Piter
  • Nesbit Larri Alan
RU2338683C2
STRUCTURE AND METHOD FOR MANUFACTURING OF FIELD EMISSION ELEMENTS WITH CARBON NANOTUBES USED AS CATHODES 2008
  • Krasnikov Gennadij Jakovlevich
  • Zajtsev Nikolaj Alekseevich
  • Gushchin Oleg Pavlovich
  • Orlov Sergej Nikolaevich
  • Pastukhova Julija Mikhajlovna
RU2391738C2
DEVICE BASED ON CARBON-CONTAINING COLD CATHODES ARRANGED ON SEMICONDUCTOR SUBSTRATE, AND METHOD OF MAKING SAME 2014
  • Golishnikov Aleksandr Anatolevich
  • Krupkina Tatjana Jurevna
  • Putrja Mikhail Georgievich
  • Timoshenkov Valerij Petrovich
  • Chaplygin Jurij Aleksandrovich
RU2579777C1
NANOSTRUCTURE, PRECURSOR OF NANOSTRUCTURE AND METHOD OF FORMING NANOSTRUCTURE AND PRECURSOR OF NANOSTRUCTURE 2006
  • Kabir Mokhammad Shafikvul
RU2406689C2
METHOD FOR MANUFACTURING ARRAY OF DETECTORS OF THZ RADIATION USING OF CARBON NANOTUBES 2016
  • Goltsman Grigorij Naumovich
  • Fedorov Georgij Evgenevich
  • Gajduchenko Igor Andreevich
  • Voronov Boris Moiseevich
  • Stepanova Tatyana Sergeevna
  • Gazaliev Arsen Shakhsenovich
  • Titova Nadezhda Andreevna
  • Kaurova Natalya Sergeevna
RU2667345C2
EMITTER FOR INTEGRATED DEVICE 2003
  • Gavrilov S.A.
  • Il'Ichev Eh.A.
  • Poltoratskij Eh.A.
  • Rychkov G.S.
RU2250526C1
SENSOR STRUCTURE BASED ON QUASI-ONE-DIMENSIONAL CONDUCTORS 2008
  • Bobrinetskij Ivan Ivanovich
  • Nevolin Vladimir Kirillovich
  • Gorshkov Konstantin Viktorovich
RU2379671C1

RU 2 314 252 C1

Authors

Khartov Stanislav Viktorovich

Simunin Mikhail Maksimovich

Nevolin Vladimir Kirillovich

Dates

2008-01-10Published

2006-08-04Filed