FIELD: investigating or analyzing materials.
SUBSTANCE: method comprises applying catalyzer on the dielectric layer and growing carbon nano-pipes by catalytic pyrolysis from gas phase. Before applying catalyzer, at least one control electrode made of low-ohm conductor is formed on the dielectric substrate. The hollows that play a role of catchers are made on the dielectric. The catchers bound the planar spreading of carbon nano-pipes when they grow and improve electric and mechanical parameters of contacts formed on the nano-pipes. Opposite to the catchers, the three-layer catalytic spots are formed. The intermediate layer of the three-layered catalytic spots is a catalyzer and is used for initiating chemical reaction. The bottom and top layers initiate the catalyzer. The geometry of the spots determines the mechanical stress in the film of the catalyzer and thus the position of the centers of growth and direction of growth of the carbon nano-pipes. The carbon nano-pipes are grown on the catalyzer by catalytic pyrolysis of the carbon-containing gas. The metallic contact electrodes are made above the catalytic spots in the region of catchers.
EFFECT: simplified method.
2 cl, 1 dwg
Title | Year | Author | Number |
---|---|---|---|
FIELD EMISSION ELEMENT AND METHOD OF ITS MANUFACTURE | 2017 |
|
RU2656150C1 |
METHOD OF MANUFACTURING OF A FIELD EMISSION ELEMENT | 2018 |
|
RU2678192C1 |
VERTICAL STRUCTURE OF SEMICONDUCTOR DEVICES USING NANOTUBES AND METHOD OF MAKING THEM | 2005 |
|
RU2342315C2 |
VERTICAL STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD OF FORMATION THEREOF | 2005 |
|
RU2338683C2 |
STRUCTURE AND METHOD FOR MANUFACTURING OF FIELD EMISSION ELEMENTS WITH CARBON NANOTUBES USED AS CATHODES | 2008 |
|
RU2391738C2 |
DEVICE BASED ON CARBON-CONTAINING COLD CATHODES ARRANGED ON SEMICONDUCTOR SUBSTRATE, AND METHOD OF MAKING SAME | 2014 |
|
RU2579777C1 |
NANOSTRUCTURE, PRECURSOR OF NANOSTRUCTURE AND METHOD OF FORMING NANOSTRUCTURE AND PRECURSOR OF NANOSTRUCTURE | 2006 |
|
RU2406689C2 |
METHOD FOR MANUFACTURING ARRAY OF DETECTORS OF THZ RADIATION USING OF CARBON NANOTUBES | 2016 |
|
RU2667345C2 |
EMITTER FOR INTEGRATED DEVICE | 2003 |
|
RU2250526C1 |
SENSOR STRUCTURE BASED ON QUASI-ONE-DIMENSIONAL CONDUCTORS | 2008 |
|
RU2379671C1 |
Authors
Dates
2008-01-10—Published
2006-08-04—Filed