FIELD: physics.
SUBSTANCE: correction may include circuit solution comprising, at least, second MOS transistor, which may also operate in subthreshold mode. Working characteristics of second MOS transistor are coordinated with characteristics of the first MOS transistor, and second MOS transistor may be placed on the same substrate.
EFFECT: creation of device for correction of changes in temperature and technological process of MOS transistor operating in subthreshold mode.
24 cl, 5 dwg
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