METHOD OF MEASURING S-PARAMETRES OF MICROWAVE TRANSISTORS IN LINEAR MODE Russian patent published in 2009 - IPC G01R27/28 

FIELD: physics; measurement.

SUBSTANCE: invention relates to microwave measuring techniques and can be used for measuring S-parametres of passive and active microwave four-terminal networks. The method of measuring S-parametres of microwave transistors in linear mode involves the following: incident and reflected voltage waves from the device are picked out, where the device contains a transistor and a transistor holder. The ratio of incident to reflected waves is measured while varying the phase difference between incident waves in the range 0°-360°. Using 12-pole reflectometres, only complex reflection coefficients are measured at the input and output of the said device for two values of phase difference between incident waves. The transistor is then removed from the device and complex reflection coefficients at inputs of the coaxial-to-strip line adapter of the transistor holder are measured. The transistor holder is then removed and complex reflection coefficients of the outputs of the 12-pole reflectometres and the ratio of incident voltage waves of the generator are measured. The obtained system of equations is solved for the unknown S-parametres of the test transistor and S-parametres of the given transistor are determined.

EFFECT: cutting on measurement time and increased accuracy of measuring S-parametres of microwave transistors.

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