METHOD OF ADEQUATE MEASUREMENT OF S-PARAMETERS OF TRANSISTORS ON THE IMITATOR-ANALYZER OF AMPLIFIERS AND SHF ACTIVE OSCILLATOR Russian patent published in 2018 - IPC G01R27/28 

FIELD: radio engineering and communications.

SUBSTANCE: invention relates to SHF radio frequency technology and can be used to adequately measure the S-parameters of transistors intended for inclusion in a microstrip line. Aim of the claimed method is to provide an adequate measurement of the S-parameters of transistors intended for inclusion in a microstrip line, in the amplification or generation mode. Task is achieved by the fact that in a method of adequately measuring the S-parameters of transistors on an imitator-analyzer of amplifiers and SHF active oscillators, which consists in calibrating the simulator-analyzer with a standard sliding short-circuited coaxial measure, after which the transistor is included in the simulator-analyzer and by means of its power supply unit the supply voltages of the transistor are set, and also with the help of the synthesizer of probing and reference signals of the simulator-analyzer, set the amplitude of the input continuous probe signal of the transistor (in the amplification mode of the transistor), in addition, by means of the input and output tunable matching transformers, the load complex reflection coefficients of the transistor are provided, providing its amplification or generation mode, further, in the selected mode of operation of the transistor, the complex reflection coefficients at its input and output and complex coefficients of its forward and reverse transmission are measured for a given test of probing and reference signals, which sets the synthesizer of probing and reference signals, and also measure the load complex reflection coefficients of the transistor with direct connection of the measuring inputs of the simulator-analyzer to the butt, based on the measured complex reflection coefficients and complex transmission coefficients, the S-parameters of the transistor are calculated in the amplification or generation mode, according to the invention, the simulator-analyzer is further calibrated by a calculated matched microstrip calibrator, further, the transistor is included in the simulator-analyzer and the stability analysis procedure of the transistor is performed, with the construction of stable and unstable regions of load complex reflection coefficients at the input and output of the transistor, where stable load complex coefficients provide the mode of amplification of the transistor, and unstable modes of its generation, after which the simulation simulator simulates the amplifier or active oscillator, at which the following are set: the supply voltage of the transistor, the amplitude of its input continuous probe signal (in the amplification mode of the transistor), as well as its load complex reflection coefficients for the amplification mode of the transistor from their stable, and for the generation mode from their unstable (-) regions so that the technical characteristics of the simulated amplifier or active oscillator monitored with the help of measuring and control devices of the simulator-analyzer, satisfied the technical design task for the design of this device, which provides an adequate measurement of the complex reflection coefficients and complex transmission coefficients of the transistor, as well as an adequate measurement of its load complex reflection coefficients and, consequently, an adequate calculation of the S-parameters of the transistor, which are normalized with respect to the wave resistance of the calculated matched microstrip calibrator used in the calibration of the simulator-analyzer.

EFFECT: technical result under implementation of the claimed solution is to adequately measure the S-parameters of the transistors of simulated amplifiers and SHF active oscillators with the provision of increased design efficiency of these devices due to a reduction in the cycle of experimental design work one and a half to two times, which is achieved due to the need for multiple technological correction of the prototype of these devices.

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