MEASURING DEVICE OF SCATTERING PARAMETERS OF FOUR-POLE AT ULTRA-HIGH FREQUENCY Russian patent published in 2013 - IPC G01R27/06 

FIELD: measurement equipment.

SUBSTANCE: in addition, the proposed device includes the fourth electric key - at the input of the measured four-pole, a transmission line section - to an integral circuit, a resistor - to its feedback chain; a measuring device of modulus of reflection coefficient is used as a measuring device of frequency characteristics; all the four electric keys are made in the form of field transistors with a Schottky barrier; all the three sections of the transmission line have length equal to one fourth of wave length in the transmission line and wave resistance equal to wave resistance of the transmission line at the input; sink of the fourth field resistor with Schottky barrier is connected to the transmission line at the input at the distance from the input of the measured four-pole, which is equal to one eighth of wave length in the transmission line; source is connected to one end of an additional section of the transmission line, the other end of which is earthed; sink of the first field transistor with Schottky barrier is connected to the transmission line at the output at the distance from the measured four-pole output, which is equal to one eighth of wave length in the transmission line; source is connected to one end of one section of the transmission line, the other end of which is earthed; sink of the second field transistor with Schottky barrier is connected to the transmission line at the output at the distance from the measured four-pole output, which is equal to one fourth of wave length in the transmission line; source is connected to one end of the other section of the transmission line, the other end of which is earthed; sink of the third field transistor with Schottky barrier in feedback chain is connected to the transmission line at the measured four-pole output; source is connected to one end of the feedback chain resistor, the other end of which is connected to one end of its capacity the other end of which is connected to the transmission line at the measured four-pole input, and constant control voltage is supplied to the gate of each of the four field transistors with Schottky barrier from the corresponding source of constant control voltage.

EFFECT: simplifying and improving accuracy of the measuring device of four-pole scattering parameters at ultra-high frequency and therefore simplifying the measuring method.

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