FIELD: nanotechnologies.
SUBSTANCE: invention relates to quantum electronics. Solid-state silicon nanostructures intended for lasers and optical amplifiers are formed by consecutive application of silicon oxides layers on silicon body. Resulted structure is subjected to annealing in nitrogen atmosphere. This allows the silicon monoxide layers transform into the silicon nanocrystal layers separated by those of silicon dioxide. Erbium ions are implanted into the formed structure silicon dioxide layer for the structure to be subjected again to annealing. Above described silicon nanostructure can be used for laser and optical amplifier optical pumping out.
EFFECT: laser and optical amplification in solid-state and silicon nanostructures.
5 cl, 3 dwg
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