METHOD FOR PRODUCING NANOCRYSTALLINE SILICON/AMORPHOUS HYDROGENATED SILICON HETEROJUNCTION FOR SOLAR ELEMENTS AND SOLAR ELEMENT WITH SUCH HETEROJUNCTION Russian patent published in 2018 - IPC H01L31/376 B82B1/00 B82B3/00 

FIELD: electronic equipment; optics.

SUBSTANCE: invention relates to the field of optoelectronic technology and can be used to create cheap and effective solar cells based on layers of amorphous hydrogenated silicon. Method for producing a nanocrystalline silicon/amorphous hydrogenated silicon heterojunction in a sample consisting of a film of amorphous hydrogenated silicon, deposited on a quartz substrate, involves irradiating the sample with femtosecond laser pulses in a vacuum at a pressure of not more than 2⋅10–2 mbar, with a central emission wavelength of 257–680 nm, a pulse repetition rate of 20–500 kHz, a pulse duration of 30–500 fs, and an energy density of laser pulses of 4–500 mJ/cm². To obtain a solar cell, the nanocrystalline silicon/amorphous hydrogenated silicon heterojunction obtained by the method described above is made on a quartz substrate with a transparent conductive sublayer, and a metal electrode (aluminum, gold or magnesium) is thermally deposited on top. Achieved properties of solar cells will eventually result in higher values (in comparison with solar cells based on a-Si:H) of the photovoltaic parameters (the following values can be achieved: photoconversion efficiency – 14 %, the open circuit voltage – 0.68 V, short-circuit current – 36.5 mA/cm²).

EFFECT: technical result achieved by using the claimed group of inventions is to provide increased stability of electrical and photoelectric properties under illumination, increased mobility of charge carriers, increased efficiency and relative cheapness in its manufacture (in comparison with solar cells made of crystalline silicon).

9 cl, 3 tbl, 4 ex, 9 dwg