METHOD FOR PRODUCTION OF INDIUM AMMONIDE LARGE-SIZE MONOCRYSTALS Russian patent published in 2013 - IPC C30B15/02 C30B15/36 C30B29/40 

FIELD: electrical engineering.

SUBSTANCE: for production of coarse-grain indium ammonide monocrystals oriented in the crystallographic direction [100] one performs synthesis and production of a polycrystal coarse-grain ingot by way of a combined process according to the Czochralski method with addition of an amount of stibium in excess of the stoichiometric 3.0-3.5 at %; then one performs monocrystal growth (equally according to the Czochralski method) using a seed crystal oriented in a crystallographic direction [100], the axial temperature gradients maintained as equal to 35-40 grad/cm.

EFFECT: invention enables improvement of crystals structure with simultaneous increase of their diameter up to 70,2 mm, increase of mountain plates yield during ingot cutting due to the growth direction, reduction of the process material intensity due to reduction of the share of non-stoichiometric material and reduction of energy and labour costs due to usage of a combined process of polycrystal ingot synthesis, cleaning and growing.

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