FIELD: chemistry; profiled silicon monocrystals manufacturing.
SUBSTANCE: silicon monocrystals are produced by crucible-free vertical float-zone method, which implies induction generation of a melt drip on initial vertical silicon ingot, seeding of monocrystal being grown on a seed [111] oriented silicon monocrystal, building-up of crystal conical portion to specified diameter, while moving initial ingot and coil in horizontal plane, under conditions, which provide for convex crystallisation front, and emergence of face (111) at melt centre surface at the moment the monocrystal specified diameter is reached. This is followed by hollow monocrystal growing, melt column, which connects the melt ring resting on the growing monocrystal with the drip on initial ingot, being positioned between edge of (111) face and cylindrical surface of the growing monocrystal.
EFFECT: production of silicon hollow (tubular) dislocation-free high-purity perfectly structured monocrystals with [111] orientation.
3 dwg
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