PROCESS TO MANUFACTURE SILICON HOLLOW MONOCRYSTALS Russian patent published in 2008 - IPC C30B13/20 C30B29/06 C30B29/66 

Abstract RU 2324017 C1

FIELD: chemistry; profiled silicon monocrystals manufacturing.

SUBSTANCE: silicon monocrystals are produced by crucible-free vertical float-zone method, which implies induction generation of a melt drip on initial vertical silicon ingot, seeding of monocrystal being grown on a seed [111] oriented silicon monocrystal, building-up of crystal conical portion to specified diameter, while moving initial ingot and coil in horizontal plane, under conditions, which provide for convex crystallisation front, and emergence of face (111) at melt centre surface at the moment the monocrystal specified diameter is reached. This is followed by hollow monocrystal growing, melt column, which connects the melt ring resting on the growing monocrystal with the drip on initial ingot, being positioned between edge of (111) face and cylindrical surface of the growing monocrystal.

EFFECT: production of silicon hollow (tubular) dislocation-free high-purity perfectly structured monocrystals with [111] orientation.

3 dwg

Similar patents RU2324017C1

Title Year Author Number
CIRCULAR INDUCTOR 2006
  • Gorjushin Georgij Aleksandrovich
RU2312154C2
UNIT FOR FASTENING HEATED ELEMENT ON ROD IN PRESSURE TIGHT CHAMBER 2009
  • Gorjushin Georgij Aleksandrovich
  • Levitskaja Tamara Anatol'Evna
  • Tolstousov Vladimir Borisovich
  • Nosov Anatolij Sergeevich
RU2434082C2
METHOD OF SINGLE CRYSTAL GROWTH FOR SEMICONDUCTORS OF TYPE AB 2006
  • Markov Aleksandr Vladimirovich
  • Sharonov Boris Nikolaevich
RU2327824C1
METHOD OF GROWTH OF MONOCRYSTAL DISKS OUT OF HIGH-MELTING METALS AND DEVICE FOR ITS IMPLEMENTATION 2013
  • Alekseev Sergej Vladimirovich
  • Afanas'Ev Valerij Davidovich
  • Vybyvanets Valerij Ivanovich
  • Evdokimov Boris Aleksandrovich
  • Zheltukhin Aleksej Evgen'Evich
  • Rodjagina Julija Valer'Evna
  • Shevchenko Aleksandr Sergeevich
  • Shotaev Aleksandr Nauruzovich
RU2553905C2
MONOCRYSTAL GROWING BY CRUCIBLELESS ZONE MELTING AND DEVICE TO THIS END 2012
  • Alekseev Sergej Vladimirovich
  • Afanas'Ev Valerij Davidovich
  • Vybyvanets Valerij Ivanovich
  • Evdokimov Boris Aleksandrovich
  • Zheltukhin Aleksej Evgen'Evich
  • Rodjagina Julija Valer'Evna
  • Shevchenko Aleksandr Sergeevich
  • Shotaev Aleksandr Nauruzovich
RU2519410C2
METHOD OF MONOCRYSTALS GROWING FROM MELT 2003
  • Amosov V.I.
  • Birjukov E.N.
  • Kulikov V.I.
  • Kharchenko V.A.
RU2222646C1
METHOD OF MANUFACTURING SILICON INGOTS IN THE FORM OF WIDE PLATES WITH VARIABLE THICKNESS 1995
  • Dobrovenskij Vladimir Veniaminovich
  • Afanas'Ev Igor' Vladimirovich
RU2095495C1
ASSEMBLY TO ATTACH HEATED BODY ON CON ROD IN TIGHT CHAMBER 2009
  • Tolstousov Vladimir Borisovich
  • Gorjushin Georgij Aleksandrovich
  • Levitskaja Tamara Anatol'Evna
  • Nosov Anatolij Sergeevich
RU2440446C2
METHOD OF PREPARING SILICON CRYSTALS WITH CYCLIC TWIN STRUCTURE 2002
  • Kibizov R.V.
  • Lebedev A.P.
RU2208068C1
METHOD AND APPARATUS FOR PRODUCING ALLOYED SILICON MONOCRYSTALS BY CRUCIBLELESS ZONE MELTING 1992
  • Dudavskij S.I.
  • Dudchenok V.V.
  • Osovskij M.I.
  • Silakov G.I.
  • Trubitsyn Ju.V.
  • Fal'Kevich Eh.S.
  • Chervonyj I.F.
RU2049164C1

RU 2 324 017 C1

Authors

Gorjushin Georgij Aleksandrovich

Dates

2008-05-10Published

2006-08-28Filed