FIELD: metallurgy.
SUBSTANCE: method includes melting of silicon in melting pot with usage of electron-beam heating, isolation of melt for evaporation of admixtures and cooling with receiving of treated silicon. Additionally melting is implemented in quartz crucible. After melting it is implemented isolation of melt at intensive heat-removing from external part of wall of melting pot at level of melt surface and during electron-beam heating, concentrated on minimum area, predominately, central part of surface of silicon melt. From external part of melting pot wall it is removed not less than 50% of heat of heat, supplied by electron-beam. From the side of melting pot bottom it is implemented additional feeding of heating.
EFFECT: increasing of cleaning rate of silicon.
3 cl, 2 ex, 1 dwg
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