METHOD OF SILICON PURIFICATION AND DEVICE FOR ITS EMBODIMENT Russian patent published in 2000 - IPC

Abstract RU 2159213 C2

FIELD: methods and device for purification of silicon with use of plasma purification technology in commercial production of silicon for photoelectronic industry including manufacture of solar batteries. SUBSTANCE: method includes heating of nonpurified silicon with plasma tongue to melt it, treatment of melt with inert and reducing gases, and steam in rotating crucible to obtain melt cylindrical in shape. Device for embodiment of the offered method consists of rotating crucible and plasma generator with channels for supply of gases. Crucible presents a shell cylindrical in shape. EFFECT: higher efficiency of method and device due to higher purity of produced silicon with uniform distribution of additives over entire volume by commercial method, reduced time for purification, and power and materials consumption. 11 cl, 5 dwg

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RU 2 159 213 C2

Authors

Abdjukhanov M.A.

Abdjukhanov I.M.

Merkushkin V.M.

Kuz'Min Ju.A.

Dates

2000-11-20Published

1999-02-25Filed