METHOD OF CLEANING METALLURGICAL SILICON FROM CARBON Russian patent published in 2019 - IPC C22B9/22 C01B33/37 

FIELD: metallurgy.

SUBSTANCE: invention relates to metallurgy and can be used for direct purification of metallurgical silicon from carbon without using environmentally hazardous process operations to degree of purity of solar silicon used in photoelectric converters of solar energy into electrical energy. At the beginning of the cleaning process, temperature of 1,500 °C, which is increased to 1,600 °C to the end of the process, initial pressure is 10 Torr, which is reduced during purification to a final value of 0.5 Torr, initial content of water in a plasma jet, determined by the ratio of the number of moles of water n(H₂O) to number of moles of hydrogen n (H₂) as 1:40, reduced by 2–4 times to ratio n(H₂O):n(H₂), making 1:100 at the finish of technological process.

EFFECT: reduced time of purification of metallurgical silicon from carbon at low rates of evaporation of elementary silicon and removal of silicon from melt in SiO compound.

1 cl, 2 dwg