FIELD: nanotechnologies.
SUBSTANCE: invention relates to nanotechnology, namely to method of directional filling of single-shell carbon nanotubes with refractory compounds by performance of chemical reaction in channels of nanotubes. Method for directional filling of SSNT with refractory semiconductor compounds by performance of chemical reaction in channels of nanotubes includes process of preliminary opening of tubes and further formation of nanocomposite MeHa1x@SSNT with the help of capillary introduction of metal halogenide inside carbon nanotube at the temperature that exceeds melt temperature of according introduced substance by at least 2K, besides nanocomposite is modified by chalcogen by performance of chemical reaction between introduced metal halogenide and melt of chalcogen. Process is carried out in vacuum at the temperature exceeding melt temperature of chalcogen but lower than melt temperature of metal halogenide, and crystallisation of modified nanocomposite, which represents semiconductor compound produced as a result of specified reaction inside nanotube, is carried out by slow cooling of reaction products.
EFFECT: production of nanocomposites of semiconductors of group All BVl inside channels of single-shell carbon nanotubes (SSNT).
10 cl, 4 dwg, 2 tbl
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