DIODE BASED ON SINGLE-SHIFT CARBON NANOTUBE AND METHOD OF MAKING SAID DIODE Russian patent published in 2011 - IPC H01L29/861 B82B1/00 B82B3/00 

FIELD: chemistry.

SUBSTANCE: diode based on a single-shift carbon nanotube includes a single single-wall carbon nanotube which contains modifying substances. The nanotubes has two parts, the first part having one type of conductivity, and the other having another type of conductivity different from the first. The diode has metal contacts. The method of making the diode based on a single-wall carbon nanotube involves synthesis of one-wall carbon nanotubes, coating the inner channel of single-wall carbon nanotubes, filling the inner channel of single-wall nanotubes with a substance, crystallisation of the substance in the inner channel of the single-wall carbon nanotubes, removing the crystal fragment from half of the carbon nanotubes and depositing contacts.

EFFECT: obtaining a nano-composite of a single-wall carbon nanotubes - incorporated inorganic compound, in which part of the nanotubes is filled and the other part remains empty.

12 cl, 2 dwg