PHOTOELECTRIC CONVERTER BASED ON NONPLANAR SEMICONDUCTOR STRUCTURE Russian patent published in 2010 - IPC H01L31/04 

FIELD: physics.

SUBSTANCE: invention can be used to provide electrical and thermal energy of separate independent objects, for example communication, surveillance systems etc, which require power of 1-50, as well as for heating a cooling agent used in the cooling system of a photoelectric converter based on a nonplanar structure. The heated cooling agent can be used to heat facilities. The photoelectric converter based on a nonplanar epitaxial structure has a housing in which there is a cylindrical epitaxial structure made from a cylindrical hollow substrate made from semiconductor material, on whose outer surface of which there is at least one epitaxial layer made from semiconductor material. On the surface of this layer there is an external cylindrical metal contact. On the inner side of the substrate there is an internal cylindrical metal contact. The metal contacts are connected to current-collector elements. Under the cylindrical epitaxial structure there is a focusing reflector made in form of an arched plate with a parabolic-cylindrical shape. On the inner surface of the plate there is a reflecting layer. Above the cylindrical epitaxial structure there is a transparent focusing lens with an arched parabolic-cylindrical shape mounted on the focusing reflector. The diametre of the lens is shorter than the diametre of the focusing reflector. The converter has a water circulation system, which passes through the inner cavity of the cylindrical epitaxial structure.

EFFECT: improvement of principal characteristics of the photoelectric converter based on a nonplanar structure is achieved owing to absence of edge effects in the cylindrical epitaxial layer, improvement of characteristics of epitaxial cylindrical layers provided by uniform distribution of temperature fields in a reactor during epitaxy on a cylindrical substrate.

5 cl, 3 dwg, 1 tbl