DESIGN OF MONOLITHIC SILICON PHOTOELECTRIC CONVERTER AND ITS MANUFACTURING METHOD Russian patent published in 2017 - IPC H01L31/04 H01L31/18 

FIELD: batteries.

SUBSTANCE: invention relates to multijunction photoelectric converters (PEC) used in solar batteries and photodetectors of space and other purposes. Monolithic silicon photoelectric converter contains diode cells accommodating perpendicular to the horizontal light-receiving surface vertical p-n junctions and located in the diode cells in parallel to the light-receiving surface horizontal n⁺-p^-(p⁺-n^-) junctions, herewith all the diode cells are connected in series into a single structure with metal cathode and anode electrodes, wherein each diode cell (and their vertical p-n junctions) is isolated from adjacent on the four sides, from the side – with a dielectric layer, from the bottom – with an additional horizontal p-n junction formed by a silicon substrate of p^-(n^-) type of conductivity and with a lower horizontal n⁺(p⁺) layer of p-n junction, herewith the upper horizontal surface of the diode cells carries an upper horizontal p-n-junction, onto n⁺(p⁺) layers of which there are respectively the cathode (anode) electrode, and onto the p⁺(n⁺) layer - the anode (cathode) electrode. Also proposed is a method of forming a monolithic silicon photoelectric converter.

EFFECT: technical result is higher efficiency factor, radiation resistance and manufacturability of multijunction converters.

3 cl, 6 dwg