SILICON MULTI-JUNCTION PHOTOELECTRIC CONVERTER WITH INCLINED STRUCTURE AND METHOD FOR PRODUCTION THEREOF Russian patent published in 2014 - IPC H01L31/42 H01L31/18 

FIELD: physics.

SUBSTANCE: present invention relates to silicon multi-junction photoelectric converters of solar cell panels. The structure of an "inclined" silicon monocrystalline multi-junction photoelectric converter according to the invention includes diode cells with n⁺-p^--p⁺ (p⁺-n^--n⁺) junctions which are parallel to a horizontal light-receiving surface; the diode cells include n⁺(p⁺) and p⁺(n⁺) regions of n⁺-p^--p⁺(p⁺-n^--n⁺) junctions through which they are connected into a single structure by metal cathodes and anodes placed on the surface of n⁺(p⁺) and p⁺(n⁺) regions to form corresponding ohmic contacts - connections, wherein the n⁺(p⁺) and p⁺(n⁺) regions and corresponding cathodes and anodes are placed at an angle in the range of 30-60 degrees to the light-receiving surface; the metal cathodes and anodes are placed on their surface partially, and partially lie on the surface of an optically transparent dielectric which is placed on the surface of n⁺(p⁺) and p⁺(n⁺) regions, wherein they form an optical reflector with the metal electrodes and the optically transparent dielectric. Also disclosed is a method of making the described structure of an "inclined" silicon monocrystalline multi-junction photoelectric converter.

EFFECT: high efficiency of photoconverters.

2 cl, 3 dwg