ABRASIVE POWDER MATERIAL AND ABRASIVE SUSPENSION FOR SEMICONDUCTOR SUBSTRATE SELECTIVE POLISHING AND POLISHING METHOD Russian patent published in 2010 - IPC C09K3/14 C01F7/44 B24B1/00 B24D3/00 

Abstract RU 2401856 C2

FIELD: chemistry.

SUBSTANCE: abrasive powder material is in form of aluminium oxide particles and contains transition aluminium oxide and not less than 5.0 wt % but not more than 40 wt % amorphous phase. The aluminium oxide particles have density of not less than 3.20 g/cm3. The invention also pertains to an abrasive suspension containing water as a solvent and said abrasive powder material in amount ranging from 3.0 wt % to not more than 30 wt %. The invention also relates to a method of preparing said abrasive material, involving: burning aluminium-containing material by heating said material to temperature sufficient for turning said aluminium-containing material into initial particles mainly containing transition aluminium oxide; and grinding the obtained initial particles to obtain aluminium oxide particles containing transition aluminium oxide and not less than 5.0 wt % but not more than 40 wt % amorphous phase. Said aluminium oxide particles have density less than 3.20 g/cm3. The method of polishing a conducting metal surface of a workpiece involves putting the abrasive suspension between the workpiece and a slab and moving the slab and workpiece relative each other.

EFFECT: change in density of abrasive material, improved selectivity of the suspension which contains the abrasive material.

24 cl, 6 dwg, 3 tbl, 2 ex

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RU 2 401 856 C2

Authors

Khehrle Ehndrju G.

Vang Jun

Dates

2010-10-20Published

2006-10-13Filed