FIELD: semiconductors.
SUBSTANCE: invention relates to chemicomechanical planarization to remove a layer of metal without damaging surface of nonconducting material in preparation of semiconducting articles. Method envisages polishing of substrate containing metal and nonconducting material using for that alumina abrasive powder wherein alumina particles are coated with silica, said powder having BET surface at least 50 m2/g and content of alpha-alumina being at least 90 wt %, from which at least 90% alumina particles have maximum width not exceeding 50 nm and 10% of particles have maximum size above 100 nm.
EFFECT: enabled achieving desired removal of metal layer without worsening of characteristics of semiconductor.
8 cl, 2 dwg, 3 ex
