APPARATUS FOR GROWING SAPPHIRE MONOCRYSTALS Russian patent published in 2011 - IPC C30B15/14 C30B29/20 

Abstract RU 2419689 C2

FIELD: chemistry.

SUBSTANCE: apparatus has a vacuum chamber 1, an electric heater 4, a crucible for melting raw material 6, inside the heater 4, a holder 7 and heat shields 8, lying between the electric heater 4 and water-cooled walls 1a, 1b of the vacuum chamber 1. Part of the shields 8 has a mirror surface facing the heater, which lies in a sealed cavity formed by welding butt-ends of cowlings of neighbouring shielding sheets in spaces between which separators are fitted and that cavity is then evacuated.

EFFECT: maximum coefficient of reflection of heat flux, low heat loss, improved parametres of the temperature field and quality of articles, low electrical energy and power of the heaters.

8 cl, 6 dwg

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RU 2 419 689 C2

Authors

Zajtsev Igor' Nikolaevich

Sternik Jurij Mordko-L'Vovich

Dates

2011-05-27Published

2009-01-21Filed