SEMICONDUCTOR LASER EMITTER WITH BAND MODULATION IN MICROWAVE RANGE Russian patent published in 2011 - IPC H01S5/42 H01S5/06 

FIELD: physics.

SUBSTANCE: semiconductor laser emitter includes a laser crystal with positive and negative electrical leads and an electrical input unit with a coplanar microwave transmission strip line formed on a dielectric substrate. The laser crystal is connected to earthing leads of the coplanar microwave transmission strip line by negative leads, and by the other lead to the signal track of the same coplanar microwave transmission strip line. In the laser crystal, the positive and negative leads are made on one side with leads of one polarity lying between loads of the other polarity. The laser crystal is installed via "reverse mounting" and is soldered to the end the coplanar microwave transmission strip line formed on the dielectric substrate. The coplanar microwave transmission strip line lies under the laser crystal so as to match corresponding leads of the laser crystal and the signal and earthing strips of the coplanar microwave transmission strip line.

EFFECT: wider modulation band.

7 dwg