FIELD: microwave tech.
SUBSTANCE: fixed high-power attenuator is made on the basis of a U-shaped matched structure containing six film microstrip resistors and three quarter-wave sections of the transmission line, the characteristic impedances of which are selected from the condition of providing the input and output matching mode. Due to the use of quarter-wave sections of the transmission line, the spatial diversity of the film microstrip resistors is realized. To compensate for the influence of parasitic capacitances of film microstrip resistors at the input and output of the fixed attenuator, matching circuits in the form of a Chebyshev low-pass filter are used.
EFFECT: increased input microwave power level while maintaining the bandwidth.
1 cl, 4 dwg
Title | Year | Author | Number |
---|---|---|---|
MICROWAVE ATTENUATOR | 2013 |
|
RU2542877C2 |
MICROWAVE ATTENUATOR | 2022 |
|
RU2786505C1 |
MICROWAVE ATTENUATOR | 2015 |
|
RU2599915C1 |
MICROWAVE ATTENUATOR | 2016 |
|
RU2641625C1 |
MICROSTRIP LOAD | 2017 |
|
RU2667348C1 |
MICROSTRIP LOAD | 2019 |
|
RU2746544C1 |
HIGH-FREQUENCY SIGNAL ADDER | 2024 |
|
RU2822858C1 |
ELECTRICALLY CONTROLLED ATTENUATOR | 0 |
|
SU1775765A1 |
HIGH-FREQUENCY SIGNALS DIVIDER | 2023 |
|
RU2805010C1 |
ATTENUATOR | 0 |
|
SU1762349A1 |
Authors
Dates
2021-03-01—Published
2020-05-26—Filed