OPTICALLY ACTIVE COMPOSITION AND LIGHT-EMITTING COMBINED DEVICE BASED ON SAID COMPOSITION Russian patent published in 2011 - IPC H01L33/50 C09K11/77 

FIELD: physics.

SUBSTANCE: described is novel assembling of semiconductor devices combined with optically active compositions. In particular, light-emitting semiconductors based on an InGaN structure, combined with highly efficient optically active langasite crystals La₃Ga₅SiO₁₄. When activating the langasite, said composition interacts with radiation of the InGaN structure. The langasite absorbs high-energy photons emitted by the InGaN structure, and re-emits light with longer wavelength. Short-wave, high-energy radiation of the InGaN structure is mixed with longer wavelength radiation of the optically active composition and forms a wide spectrum which is perceived by a viewer as white light.

EFFECT: design of a wideband light source based on semiconductor structures, where a langasite photoluminescent phosphor with high radiation excitation efficiency, characteristic of InGaN light-emitting diodes, re-emits light in the middle range of the visible spectrum.

19 cl, 4 tbl, 2 dwg