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2 426 691

(13)

(51)

IPC

C01B33/107(2006-01-01)

(21) (22)

Application

2010103263/05, 2010-02-02

(24)

Start date

2010-02-02

(22)

Actual filing date

2010-02-02

(45)

Published

2011-08-20

(72)

Inventor

Sokolov Nikolaj MikhajlovichStorozhenko Pavel Arkad'EvichSuponenko Aleksandr NikolaevichPolivanov Aleksandr NikolaevichChinnov Vladimir Vsevolodovich

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie Ordena Trudovogo Krasnogo Znameni Nauchno-Issledovatel'Skij Institut Khimii I Tekhnologii Ehlementoorganicheskikh Soedinenij" Gniikhtehos)Ooo Kremnij"

METHOD FOR DEEP PURIFICATION OF TRICHLOROSILANE FROM HIGH-BOILING COMPOUNDS Russian patent published in 2011 - IPC C01B33/107

Abstract RU 2426691 C1

FIELD: chemistry.

SUBSTANCE: invention can be used in production of silicon semiconductor. Trichlorosilane obtained via hydrochlorination of technical silicon is purified from high-boiling compounds, including methylchlorosilane, through distillation in one column with concentration ratio of trichlorosilane to methylchlorosilane in the residue equal to 23-30.

EFFECT: invention enables to obtain trichlorosilane with methylchlorosilane content of not more than 8,4·10^-6 wt % and output of up to 98%.

1 tbl, 9 ex

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RU 2 426 691 C1

Authors

Sokolov Nikolaj Mikhajlovich

Storozhenko Pavel Arkad'Evich

Suponenko Aleksandr Nikolaevich

Polivanov Aleksandr Nikolaevich

Chinnov Vladimir Vsevolodovich

Dates

2011-08-20—Published

2010-02-02—Filed