METHOD OF PRODUCTION OF TRICHLOROSILANE Russian patent published in 2003 - IPC

FIELD: methods of production of silicon chlorides; production of semiconductor silicon; chemistry. SUBSTANCE: proposed method includes bubbling of vapor-and-gas mixture obtained through hydrochlorination of silicon- containing raw material in still of rectifying column containing liquid chlorosilanes. Vapor-and-gas mixture escaping from column is cooled at two stages at temperature of from 22 to 32 C and from minus 5 to minus 10 C. Condensate of first and second stages is mixed at ratio of 1: (0.6- 5.9) and is returned to column in form of phlegm. Uncondensed vapor- and-gas mixture is directed for condensation for obtaining target product. EFFECT: reduced power requirements; enhanced purity of target product. 3 cl, 1 tbl, 1 ex