METHOD OF PRODUCTION OF CHLOROSILANE Russian patent published in 2003 - IPC

Abstract RU 2214363 C1

FIELD: chemistry of organosilicon compounds; methods of production of high-purity trichlorosilane; production of semiconductor silicon. SUBSTANCE: chlorosilanes are produced by hydrochlorination of silicon-containing raw material by synthetic hydrogen chloride at content of hydrogen of 1-8%. Reaction product is condensed and cleaned at three-stage rectification at extraction of heavy fractions at two stages. Mass ratio of heavy fractions of first and second stages is equal to 1: (0.12-0.8). Rectification is performed at pressure of column bottom ranging from 1.8 to 3.0 kgf/sq cm. EFFECT: reduction of content of carbon-containing admixtures; reduced power requirements. 3 cl, 1 tbl

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RU 2 214 363 C1

Authors

Gashenko S.I.

Tishchenko I.A.

Maksimova G.V.

Dates

2003-10-20Published

2002-04-24Filed