METHOD OF SEARCHING FOR, DETECTING AND RECOGNISING ELECTRONIC DEVICES WITH SEMICONDUCTOR ELEMENTS Russian patent published in 2011 - IPC G01S13/56 

FIELD: physics.

SUBSTANCE: method involves exposing the investigated object to a pulsed electromagnetic field of a monochromatic probe signal with frequency which alternately varies within three frequency bands and equal radiation power of the probe signals, while synchronously receiving in each frequency band second harmonic reflected signals, picking up the maximum level of the second harmonic, setting, based thereon, the corresponding frequency of the monochromatic probe signal of pulsed radiation, from which presence of a device with semiconductor elements on the object and its working frequency band are determined, and determining the location zone of the device from the direction of orientation of the electric axis of the antenna of the probe signal. The location zone of the detected device is repeatedly exposed to the electromagnetic field of continuous radiation of the monochromatic probe signal in the working frequency band which is set based on the maximum level of received second harmonic signals of the monochromatic probe signal of pulsed radiation, wherein radiation power of the probe signal is varied. Reflected second harmonic signals of the continuous radiation of the monochromatic probe signal are received. The minimum radiation power value of the probe signal is measured, wherein the level of the received second harmonic signal of the probe signal is maximum. The working frequency band of the identified device is determined from the frequency of minimum power radiation and its type is accurately established. The disclosed method employs axial-mode antennae for sector-type beamforming in azimuthal planes. Exposure of the investigated object to the field of pulsed or continuous radiation of monochromatic probe signals and reception of reflected second harmonic signals is carried out on mutually orthogonal linear polarisations of electromagnetic waves, as well as electromagnetic waves with circular field polarisation.

EFFECT: high reliability of detection and accuracy of recognising radio electronic devices with semiconductor elements, and longer detection range.

3 cl, 2 dwg