FIELD: electricity.
SUBSTANCE: substrate of active matrix includes the following: many pixel areas determined in the form of matrix; many source buses spread parallel to each other between pixel areas; many gate lines spread parallel to each other in the direction crossing source buses; many auxiliary capacitive buses spread between gate lines; many thin-film transistors having gate electrode, semiconductor layer, source electrode and drain electrode; and many auxiliary capacitive electrodes provided in the appropriate pixel areas with possibility of being spread along auxiliary capacitive buses and with possibility of overlapping auxiliary capacitive buses, in the same layer as drain electrode of each of thin-film transistors. In each of the auxiliary capacitive electrodes of pixel areas the side end on one side is located inside one of the auxiliary capacitive buses; at that, the above side end on one side is located in the direction in which the drain electrode crosses the end of gate electrode so that it can enter on the outer side of gate electrode inward, and side end on the other side is located outside one of auxiliary capacitive buses; at that, the above side end on the other side is located in the direction in which drain electrode crosses the end of gate electrode so that it can leave the inner side of the gate electrode to its outer side.
EFFECT: suppression of changes of voltage generated with parasitic capacitive resistance between gate electrode and drain electrode.
9 cl, 19 dwg
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Authors
Dates
2011-11-20—Published
2009-02-04—Filed