LOW-NOISE AMPLIFIER AND AUXILIARY MONOLITHIC INTEGRAL CIRCUIT FOR THIS AMPLIFIER Russian patent published in 2011 - IPC H03F1/26 H03F1/02 

FIELD: electricity.

SUBSTANCE: low-noise amplifier (LNA) comprises field transistors (FT) (F1, F2, F3, F4), installed with the possibility to process signals received by the amplifier; an input (10) of supply made with the possibility to receive power supply necessary for LNA operation; and an auxiliary monolithic integral circuit (IC). The auxiliary monolithic IC comprises an FT control circuit (2), made with the possibility to monitor drain current in each FT and to control it; an FT selection circuit (3, 24, 22) made with the possibility to determine the level of a permanent component of signal voltage supplied to the input of supply, and to supply the FT selection signal to the FT control circuit (2) in compliance with the determined level of the permanent component.

EFFECT: simplified circuit of field transistors control for low noise amplifiers.

38 cl, 10 dwg