FIELD: chemistry.
SUBSTANCE: the invention relates to chemistry, in particular, to growing crystals from gas-vapour phase. The method includes low-temperature processing of fullerene powder C60 in the dynamic vacuum of 10-4 Pa at the temperature of 720 K for three hours, then the processed powder is sublimated in the dynamic vacuum of 10-4 Pa at the temperature of 880 K for 8 hours, initial fullerene crystals C60 are grown from the sublimated powder in sealed quartz vessels at the temperature of 880 K and the temperature difference between the evporation zone and the growth zone of 5 K during 1-5 days. The final fullerene crystals C60 are grown from the initial crystals in conditions similar to the growth conditions for initial crystals.
EFFECT: production of fullerene crystals C60 with high structural perfection, relatively large size (4-8 mm length, 3-4 mm width and 1-2 mm thickness) almost without contaminants.
3 dwg, 1 ex
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