METHOD OF C60 FULLERENE CRYSTAL GROWING Russian patent published in 2018 - IPC C01B32/156 C30B1/08 C30B28/02 C30B29/02 B82B3/00 B82Y40/00 

FIELD: optics; electrical engineering.

SUBSTANCE: invention can be used in semiconductor optoelectronics. Sample of the powder of the original C60 fullerene is loaded into a quartz ampoule, the inner surface of which is coated with pyrolytic carbon to protect the original powder from exposure to UV radiation. Then, a low-temperature treatment is carried out in a dynamic vacuum, the fullerene sublimate is subsequently heated and held in a dynamic vacuum with a temperature gradient between the sublimation and condensation zones. Subsequently, the primary crystals of C60 are re-sublimed and grown in a static vacuum under a temperature gradient between the sublimation and condensation zones and the growth of the C60 crystal crystals under the same conditions, and the primary and finishing crystals of C60 are grown in the same ampoule without reloading the powder, moving it to the corresponding zone.

EFFECT: yield of suitable C60 fullerene crystals is 80–85 % by weight, the crystal size is about 1 cm.

1 cl, 2 dwg, 1 ex