METHOD OF SOLDERING SILICON CARBIDE-BASED CHIPS Russian patent published in 2012 - IPC H01L21/52 

FIELD: chemistry.

SUBSTANCE: method of soldering silicon carbide-based chips, involving formation of a two-layer nickel/silver coating on the soldered side of the chip and soldering to the base of a housing made from metallised aluminium nitride. The soldered surfaces of the chip and housing are coated with an adhesion layer and then a binder metal from a Ni-B alloy with thickness of 3-5 mcm to form a diamondiferous layer of diamond powder with grain size of 25-30 mcm, said grains protruding from the surface of the binder metal by 20-25 mcm; a solder foil is placed between the chip and the housing, said solder foil containing metals which are adhesion-active with respect to diamond; the thickness of the solder foil is selected based on the condition of complete filling of the gaps between diamond grains, wherein the diamond grains on the chip and the housing must not touch each other in the molten solder, and during soldering, the crystal is exposed to ultrasonic vibrations.

EFFECT: high heat removal from the chip to the housing.

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