METHOD FOR MANUFACTURING A HEAT SINK OF A SEMICONDUCTOR DEVICE BASED ON CVD DIAMOND Russian patent published in 2023 - IPC H01L21/58 H01L23/373 

FIELD: electronic engineering.

SUBSTANCE: method for manufacturing a diamond heat sink for a semiconductor device includes metallizing the surface of a diamond base intended for mounting a semiconductor crystal by vacuum deposition of a system containing titanium and attaching the diamond base to the copper base. A titanium layer 0.15-0.2 mcm thick is deposited on the surface of the diamond base in vacuum and a copper layer 1-3 mcm thick at a temperature of 300-450°C. To connect the diamond base with the copper base, the surface of the copper base is electroplated with a silver layer 3.0-6.0 mcm thick, followed by vacuum deposition of a titanium layer 0.15-0.2 mcm thick. Then the base of CVD diamond with its growth surface is pressed against the surface of the copper base coated with silver and titanium and heated in vacuum to a temperature of 820-850°C.

EFFECT: no need for time-consuming grinding and polishing of a CVD diamond plate and possibility of mounting a semiconductor crystal at temperatures up to 450°C.

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