MICROWAVE INTEGRATED CIRCUIT Russian patent published in 2023 - IPC H01L27/02 

FIELD: electronic engineering.

SUBSTANCE: present invention relates to a microwave integrated circuit and can be widely used in solid-state microwave electronics. Active elements isolated from the grounded reverse side of the substrate and placed above holes with a diameter of 0.1-0.3 mm, as well as active elements connected to the grounded reverse side of the substrate by source leads and placed above holes with a diameter of more than 0.3 mm, are mounted on a dielectric substrate using the flip-crystal method.

EFFECT: eliminating the above disadvantages, increasing the efficiency of heat removal from active elements of various circuit connection and installation options, increasing the mechanical strength of the dielectric substrate with a thin layer of diamond, improving the electrical characteristics of the integrated circuit by reducing the inductance and electrical resistance of ground connections, as well as reducing the cost of the dielectric substrate and the entire structure of the microwave integrated circuit as a whole.

4 cl, 13 dwg