PHOTOGALVANIC CELL AND METHOD OF MAKING PHOTOGALVANIC CELL Russian patent published in 2012 - IPC C03C17/34 

FIELD: chemistry.

SUBSTANCE: invention relates to a photogalvanic cell. The photogalvanic cell has a transparent glass substrate connected to a transparent electroconductive layer capable of forming an electrode for the photogalvanic cell and consisting of a doped oxide, and a mixed layer lying between the glass substrate and the transparent electroconductive layer. That layer consists of at least one of a first nitrite or oxynitride or oxide or oxycarbide, having good adhesion to glass, and at least one of a second nitride or oxynitride or oxide or oxycarbide, capable of forming, if necessary in doped form, a transparent electroconductive layer. The method of making a photogalvanic cell is realised in the presence of at least one fluorine compound.

EFFECT: reduced separation of conducting oxide layers and high adhesion thereof.

30 cl, 5 ex