MODULE OF POWER SEMICONDUCTOR INSTRUMENTS Russian patent published in 2012 - IPC H01L23/40 

FIELD: electricity.

SUBSTANCE: module of power semiconductor instruments includes at least two units of power semiconductor instruments, which are connected to each other; at that, each unit has housing and each unit is equipped with cooling plate to which controlled semiconductor instruments are connected with possibility of heat supply. Module housing in which units of power semiconductor instruments are located is provided in the module. Cooling plates of units of power semiconductor instruments form at least some part of module housing; at that, units of power semiconductor instruments face each other, and module housing has side walls which pass between cooling plates and which consist of insulating material. Connecting terminals are provided for connection of units of power semiconductor instruments; at that, connecting terminals pass through side walls.

EFFECT: invention provides module of power semiconductor instruments, which has compact design, which is easy-to-manufacture and provides protection in case of explosion.

6 cl, 2 dwg