SEMICONDUCTOR POWER MODULE Russian patent published in 2004 - IPC

FIELD: power electronics.

SUBSTANCE: at least one semiconductor chip 4 brought in contact by applying certain pressure is electrically connected through contact member 8 to one main lead 30. Contact member 8 has two flat contact surfaces 81, 82 with spring member 7 in-between. Equal contacting force is ensured by respective spring member 7 irrespective of position and height of separate chips 4. Supporting member 10 prevents mechanical overloads on semiconductor chips 4 when module is compressed. Such design of semiconductor module ensures that all semiconductor chips are held at equal pressure irrespective of their distance to second main lead.

EFFECT: improved conductivity of means meant for contacting.

8 cl, 2 dwg