FIELD: electricity.
SUBSTANCE: in a power semiconductor module (1), which includes at least two electrically interconnected power semiconductor units (19, 20), having controlled power semiconductors, a module housing (2, 3, 13) in which the power semiconductor units (19, 20) are located and which has electrically insulating side walls (13), and at least one connection bus (9, 10, 11, 12, 21) extended through the side wall (13) and connected to at least one of the power semiconductor units (19, 20), insulating side walls (13) are constructed in form of a stack of insulating and partial elements (14, 15, 16) constructed as a single piece. The partial elements (14, 15, 16) adjoin each other through contact regions.
EFFECT: power semiconductor module having high explosion resistance and made with particularly optimum costs.
10 cl, 2 dwg
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