SELECTIVE AMPLIFIER Russian patent published in 2012 - IPC H03F3/00 

FIELD: radio engineering.

SUBSTANCE: selective amplifier includes signal source that is connected to emitters of input transistors, p-n junctions connected between bases of input transistors, current mirror consistent with bus of power supply the input of which is connected to collector of input transistor, current mirror consistent with bus of power source the input of which is connected to collector of input transistor. Signal source is connected to emitter of input transistor through in-series connected correcting capacitor and frequency-determining resistor, as well as to emitter of input transistor through in-series connected correcting capacitor and frequency-determining resistor, output of current mirror is connected to base of input transistor, the output of the second current mirror is connected to base of input transistor, and common node of p-n junctions is connected to output of device (13). Besides, frequency-determining resistor and correcting capacitor is connected as to alternating current between output of device (13) and common bus of power supplies. In some cases, it allows reducing total power consumption and implementing high-quality selective microwave device with f₀=1÷5 GHz.

EFFECT: improving Q factor of amplitude-frequency response of the amplifier and its voltage amplification factor at quasi-resonance frequency f₀.

3 cl, 5 dwg