FIELD: physics.
SUBSTANCE: photoelectronic element consists of monocrystalline silicon chips with flat diffusion p-n junctions (p-n chips), piled one over the other to form a light-detecting surface with alternating p- and n-regions, having the relief of the light-detecting surface in form of continuously repeating longitudinal depressions lying such that the sectional plane of the relief, which defines its profile, is perpendicular to the direction of stacking p-n chips, characterised by that the profile of the depressions has appearance of asymmetric triangles, the base of which lies on a virtual plane of the light-detecting surface, and angles at the base α and β are linked by the relationship α<β≤90°.
EFFECT: high percentage of light absorption by the light-detecting surface and high efficiency of the photoelectronic element.
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