SEMICONDUCTOR PHOTOCONVERTER AND METHOD OF MAKING SAID CONVERTER Russian patent published in 2009 - IPC H01L31/42 H01L31/18 

FIELD: physics; semiconductors.

SUBSTANCE: invention relates to semiconductor engineering and specifically to photoelectric converters (PC) for direct conversion of solar energy to electrical energy using solar cells. The invention can be used in renewable sources of energy. According to the invention, in the semiconductor photoconverter which consists of monocrystalline silicon wafers with vertical diffused p-n junctions connected to each other into a single horizontal structure by metallic liners, with current leads with at least one light-receiving surface with an inversion layer and a dielectric antireflection coating in the p-type conduction region adjacent to the diffused p-n junction, parallel to the light-receiving surface there is at least one nano-cluster region with n-type conduction at a distance from the inversion layer equal to or less than the sum of the thickness of the space-charge regions of the inversion layer and nano-cluster region. A method of making the photoconverter is also disclosed.

EFFECT: increased efficiency of the photoconverter due to longer mean life of non-equilibrium charge carriers with simultaneous reduction of the cost of the technology of making the photoconverter due to its simple design.

2 cl, 4 dwg