SINTERED SILICON CARBIDE-BASED REFRACTORY MATERIAL WITH SILICON NITRIDE AS BINDER Russian patent published in 2013 - IPC C04B35/573

Abstract RU 2496745 C2

FIELD: chemistry.

SUBSTANCE: invention relates to sintered silicon carbide (SiC) based material which is used as furnace refractory or other sintered support structures: block, slab or pipe of a heat exchanger, heat recuperator, incinerator, glass furnace, metallurgical furnace, skid pipes of a metallurgical furnace, thermocouple pipes, immersion heater or pipes for transporting molten metal. A moulded silicon carbide-based refractory article is obtained by reaction sintering of a mixture containing silicon carbide grains, silicon metal and 0.05-1.5% boron, at temperature of 1100-1700°C to form silicon nitride (Si₃N₄) binder. The weight ratio Si₃N₄/SiC of the sintered material is in the range of 0.05-0.45.

EFFECT: high resistance to cyclic temperature changes in fields of application where in any cycle, temperature changes by at least 1000°C and any cycle is more than 1 hour long.

30 cl, 5 tbl, 2 dwg

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RU 2 496 745 C2

Authors

Zhorzh Ehrik

Margjuin Oliv'E

Muatrie Lionel'

Sitti Oliv'E

Dates

2013-10-27—Published

2009-02-05—Filed