METHOD OF PRODUCING REFRACTORY MATERIAL BASED ON SILICON CARBIDE AND SILICON Russian patent published in 2012 - IPC C04B35/565 

FIELD: chemistry.

SUBSTANCE: invention relates to material science, particularly to high-temperature ceramic materials, and can be used to produce refractory structural material based on silicon carbide and silicon. The method of producing refractory material based on silicon carbide and silicon involves filling a mould made from carbonaceous material with silicon carbide and silicon, giving filling material the shape of the article, heating and thermal treatment in a reducing atmosphere and siliconising by saturating silicon carbide with silicon, first with molten silicon and then with silicon vapour. Thermal treatment is carried out at temperature 2300-2500°C or higher up to the boiling point of silicon for 2-3 hours until complete dissolution of silicon carbide in silicon. Content of silicon in the mixture is given with excess in ratio Si/SiC not less than 3/1, and content of silicon in the obtained material ranges from 15 to 50 wt % at normal conditions.

EFFECT: high strength and heat resistance of articles.

2 ex, 4 dwg