MODULATOR ON MOS-TRANSISTORS Russian patent published in 2013 - IPC H03C1/00 

FIELD: electricity.

SUBSTANCE: excitation frequency and modulated signal frequency are different: modulation is carried out at doubled frequency in respect to excitation frequency. The device uses a complementary pair of MOS-transistors (CMOS-pair), connected in accordance with the parallel circuit and excited by sign-variable rectangular pulses of current with duration π/2, at the same time at the outlet of the modulator there is a high-pass RC-filter.

EFFECT: reduced shift and drift of modulator zero.

3 cl, 3 dwg