SEMICONDUCTOR DEVICE, METHOD TO MANUFACTURE SEMICONDUCTOR DEVICE, DEVICE TO TRANSMIT SIGNALS OF MILLIMETRE RANGE VIA DIELECTRIC, METHOD TO MANUFACTURE DEVICE AND SYSTEM TO TRANSMIT SIGNALS OF MILLIMETRE RANGE VIA DIELECTRIC Russian patent published in 2014 - IPC H01L23/12 

FIELD: electricity.

SUBSTANCE: device to transmit signals of millimetre range via a dielectric comprises a semiconductor crystal arranged on an intermediate substrate and made as capable of transmitting a signal of millimetre range via a dielectric, an antenna structure connected to a semiconductor crystal, two packaged semiconductor devices comprising a cast block of polymer compound made to close a semiconductor crystal and an antenna structure, and a dielectric tract of signal transmission arranged between two packaged semiconductor devices of signal transfer in the millimetre range. The specified packaged semiconductor devices are installed so that between their antenna structures there is the specified dielectric tract of signal transfer.

EFFECT: development of a structurally simple circuit of signal transfer in millimetre range via a dielectric, which does not depend on connectors having a certain number of terminals and on cables requiring relatively large area for installation.

25 cl, 39 dwg