HIGH-FREQUENCY BALANCED AMPLIFIER Russian patent published in 2014 - IPC H03F3/60 

FIELD: radio engineering, communication.

SUBSTANCE: high-frequency balanced amplifier includes first and second parallel amplification channels and an adder unit connected thereto, the output of which is designed for connecting an asymmetrical load. Each amplification channel is in form of two series-connected transistors, wherein the first transistors of the first and second amplification channels are noise-matched, and the second transistors are configured to further amplify signals. A balancing capacitor is connected between emitters of the second transistors, said capacitor being configured to provide a given phase balance of signals in the parallel amplification channels. The adder unit is a matching inphase transformer configured to match symmetrical outputs of the high-frequency balanced amplifier with an asymmetrical load.

EFFECT: achieving a given gain coefficient with a minimal noise factor.

2 cl, 2 dwg