CS TRANSISTOR Russian patent published in 2022 - IPC H01L29/72 

FIELD: electronics.

SUBSTANCE: invention relates to semiconductor electronics and can be applied in the creation of powerful, heavy-duty, and high-voltage high-frequency CS transistors (CS transistor being a transistor with cascading power summation). The CS transistor according to the invention comprises separate transistor structures and has an output electrode, a control electrode, and a common electrode, wherein each transistor structure includes an output electrode, a control electrode, and a common electrode, installed on a common heat-removal substrate, the output electrode of the previous transistor structure is connected with the input electrode of the subsequent transistor structure, the output electrode of the last transistor structure is connected with the output electrode of the CS transistor, a resistor is connected between the input electrode and the control electrode of each transistor structure, and the control electrode of the previous transistor structure is connected with the control electrode of the subsequent structure by a resistor.

EFFECT: increase in the gain coefficient and the output power of the multistructural high-frequency CS transistor with no increase in the input and output currents; reduced input and output capacities of the CS transistor; increase in the electrical strength of the CS transistor; and increase in the power and heat stability of the CS transistor due to the prevented effect of secondary thermal breakdown.

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