FIELD: physics.
SUBSTANCE: invention relates to production of solid semiconductors, particularly, to silicon as ingots or strips used for fabrication of photovoltaic element substrates. Proposed method comprises the stages of semiconductor melt preparation from the semiconductor first portion including doping admixtures and solidification of fused semiconductor. Additionally, it comprises addition in one or several steps during solidification of extra semiconductor portions also containing doping admixtures to semiconductor melt.
EFFECT: desirable and invariable conductivity.
13 cl, 4 dwg
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