METHOD OF MAKING A LIGHT-EMITTING PIN-DIODE Russian patent published in 2024 - IPC H01L33/26 

FIELD: optoelectronic equipment.

SUBSTANCE: invention relates to optoelectronic engineering, specifically to the technology of making semiconductor light-emitting PIN diodes. Method of making a light-emitting PIN diode from an indirect-gap semiconductor comprising substrate 1, a p-layer, an n-layer, active i-layer 2 located between the p-layer and the n-layer and in contact between them, as well as electrodes 4 on p- and n-layers, consists in that substrate 1 is made from diamond crystal doped with boron, or nitrogen, or phosphorus, and is used as one of said p- or n-layers. Layer 3 with conductivity type opposite to substrate 1 is made by homoepitaxial synthesis by chemical vapor deposition (CVD) with addition to the growth chamber of alloying gases containing boron, or nitrogen, or phosphorus atoms in concentration not lower than 10¹⁷ cm^-3. Active i-layer 2 is made with thickness of not more than 15 mcm with concentration of background impurities not higher than 10¹⁴ cm^-3 by means of homoepitaxial synthesis by method of CVD with addition to growth chamber of gases containing atoms forming luminescent centres in diamond. After formation of all p-, i- and n-layers, mechanical polishing of sides of the obtained parallelepiped is performed to roughness of not more than 50 nm.

EFFECT: invention solves the problem of current limitation through a diode with a resistance relative to a thin p+ or n+ layer due to the lateral flow of electric current in this layer, as well as the problem of reducing the probability of output of photons from the i-layer of the diode due to passage of photons through the p+ or n+ layer.

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