FIELD: chemistry; sphere of manufacture of semiconductor material. SUBSTANCE: essence of this process resides in that homogeneously alloyed silicon material is grown from by Chokhralski method from melt containing phosphorus, additionally introducinging compensating boron additive into melt according to preset program with allowance for variation in concentration of phosphorus in melt. Mathematical formulae needed for calculating such variation are given in specification. EFFECT: more sophisticated technique. 4 cl, 1 tbl
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